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MTD20P06HDL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
60
?
?
81.3
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 125 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain?Source On?Resistance
V GS(th)
R DS(on)
1.0
?
?
1.7
3.9
143
2.0
?
175
Vdc
mV/ ° C
m W
(V GS = 5.0 Vdc, I D = 7.5 Adc)
Drain?Source On?Voltage (V GS = 5.0 Vdc)
V DS(on)
Vdc
(I D = 15 Adc)
(I D = 7.5 Adc, T J = 125 ° C)
?
?
2.3
1.6
3.0
2.0
Forward Transconductance (V DS = 10 Vdc, I D = 7.5 Adc)
g FS
9.0
11
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
850
1190
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
210
66
290
130
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
19
38
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DS = 30 Vdc, I D = 15 Adc,
V GS = 5.0 Vdc,R G = 9.1 W )
t r
t d(off)
t f
?
?
?
175
41
68
350
82
136
Gate Charge
(V DS = 48 Vdc, I D = 15 Adc,
V GS = 5.0 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
20.6
3.7
7.6
8.4
29
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 15 Adc, V GS = 0 Vdc)
(I S = 15 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 15 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.5
1.9
64
50
14
0.177
3.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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